Method for isolating SiO.sub.2 layers from PZT, PLZT, and platinum layers

A method for isolating a first layer including SiO.sub.2 from a second layer in an integrated circuit comprising the steps:

• depositing a bottom layer comprising either said first layer of said second layer;
• depositing a third layer of material which is substantially inert with respect to SiO.sub.2 and said first and second layers and which is substantially an electrical insulator, said third layer being deposited on said bottom layer;
• and
• depositing the other of said first and second layers on said third layer.

A ferroelectric capacitor structure comprising:

• a first layer comprising SiO.sub.2 ;
• a first electrode comprising a second layer, said second layer comprising a conducting material;
• a third layer comprising a ferroelectric material, said third layer overlying said first electrode and extending laterally beyond said first electrode;
• a fourth layer of a substantially electrical insulating material which is substantially inert with respect to said ferroelectric material, said fourth layer being disposed adjacent to said first layer so as to prevent contact between said ferroelectric material and said first layer or said second layer.