Wiring method for semiconductor integrated circuits
AssigneesHitachi, Ltd., Hitachi Software Engineering Co., Ltd.
InventorsKatsuyoshi Suzuki, Tatsuki Ishii, Tomio Taniguchi
Life of this patent
Estimating the term…
Loading patent…
AssigneesHitachi, Ltd., Hitachi Software Engineering Co., Ltd.
InventorsKatsuyoshi Suzuki, Tatsuki Ishii, Tomio Taniguchi
Estimating the term…
A novel wiring method for multilayered semiconductor integrated circuits is disclosed. For example, a semiconductor integrated circuit of a 6-layered wiring structure can be formed with a first layer covered with gates, a second layer, a third layer, a fourth layer and a fifth layer making up logic wiring layers, and a sixth layer making up a power layer. Lattice-shaped wires are formed in a longitudinal direction on the second layer and the fourth layer, and in a lateral direction on the third layer and the fifth layer. The second layer forming the bottom layer and the fifth layer forming the uppermost layer, or a combination of the second layer and the fifth layer of a general wiring structure are used as main layers of wires requiring consideration of signal transmission delay time.
A wiring method for semiconductor integrated circuits having a multilayered wiring structure, comprising the steps of:
A wiring method for semiconductor integrated circuits having a multilayered wiring structure, comprising the steps of:
A wiring method for semiconductor integrated circuits of multilayered wiring structure for fixing the signal transmission delay time by equalizing the wire lengths,
A wiring method for semiconductor integrated circuits of multilayered wiring structure for equalizing the signal transmission delay time,
Dependencies are inferred from the claim text.