Method for dry etching
AssigneeOki Electric Industry Co., Ltd.
InventorMotoki Kobayashi
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Abstract
A method for dry etching is disclosed which incorporates the steps of preparing a substrate having a metal film thereon in which aluminium is contained therein; generating a plasma by interacting a mixture gas consisting of a chloride gas, an oxygen gas and a nitrogen gas or a mixture of a chloride gas, a chlorine gas, an oxygen gas and a nitrogen gas with a microwave in a magnetic field, and etching the metal film in the plasma, whereby the metal film which contains aluminum can be etched without undercutting it and forming residues.
Claims17
A method for etching a metal film containing aluminium, comprising the steps of:
- forming a metal film on a substrate;
- forming an inorganic mask on a part of the metal film, the other part of the metal film being exposed;
- introducing a mixture gas consisting essentially of a chloride gas, an oxygen gas and a nitrogen gas into a reaction chamber;
- introducing microwaves into the reaction chamber;
- generating a magnetic field into the reaction chamber;
- interacting the microwaves with the magnetic field to change the mixture gas into a plasma in the reaction chamber;
- and
- subjecting the substrate having the metal film and the inorganic mask thereupon to the plasma to etch the exposed metal film in the reaction chamber and to form a taper shaped side wall for the remaining metal film.
A method for etching a metal film containing aluminium, comprising the stops of:
- forming a metal film on a substrate;
- forming an inorganic mask on a part of the metal film, the other part of the metal film being exposed;
- introducing a mixture gas consisting essentially of a chloride gas, a chlorine gas, an oxygen gas and a nitrogen gas into a reaction chamber;
- introducing microwaves into the reaction chamber;
- generating a magnetic field in the reaction chamber;
- interacting the microwaves with the magnetic field to change the mixture gas to a plasma in the reaction chamber;
- and
- subjecting the substrate having the metal film and the inorganic mask to the plasma to etch the exposed metal film in the reaction chamber, and form a taper shaped side wall for the remaining metal film.
Dependencies are inferred from the claim text.