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US 5,211,801 AGranted
Method for manufacturing single-crystal silicon carbide
AssigneeSiemens Aktiengesellschaft
InventorRene Stein
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Abstract
Single crystals of silicon carbide (SiC) can be manufactured by subliming and partially decomposing a base material of crystalline silicon carbide powder and by growing the single crystals from seed crystals. According to the present invention, an excess of silicon is added to the silicon carbide base material. Using this technique, high purity, single-crystal silicon carbide is obtained.
Claims6
A method for the growth of single-crystal silicon carbide in a reaction vessel having a protective atmosphere and a small temperature gradient in the direction of growth, comprising:
- adding excess silicon to a crystalline silicon carbide powder;
- subliming and partially decomposing the crystalline silicon carbide powder;
- and
- growing, on a seed crystal, single crystals of silicon carbide from the sublimed and partially decomposed crystalline silicon carbide powder;
- wherein said excess silicon is in an amount of from about 0.1% to 5%.
2 more elements
Dependencies are inferred from the claim text.