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US 5,210,431 AGranted
Ohmic connection electrodes for p-type semiconductor diamonds
AssigneeSumitomo Electric Industries, Ltd.
InventorsTunenobu Kimoto, Tadashi Tomikawa, Shoji Nakagama, Masayuki Ishii, Nobuhiko Fujita
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Abstract
In an ohmic contact electrode for the p-type semiconductor diamond, the electrode is formed of metals or metallic compounds containing boron on a p-type semiconductor diamond, so as to obtain a decreased contact resistance.
Claims3
An ohmic contact electrode for a p-type semiconductor consisting essentially of:
- a p-type semiconductor diamond substrate;
- and
- a metal or metallic compound selected from the group consisting of:
- Au, Pt, Al, Ag, Ni, Ta, Cs, Zr, TiSi.sub.2, and containing at least 0.01% and not more than 10% boron formed on said substrate.
1 more element
Dependencies are inferred from the claim text.