Method for manufacturing a semiconductor device comprising a semiconductor film

Abstract

A high quality semiconductor device comprising at least a semiconductor film having a microcrystal structure is disclosed, wherein said semiconductor film has a lattice distortion therein and comprises crystal grains at an average diameter of 30 .ANG. to 4 .mu.m as viewed from the upper surface of said semiconductor film and contains oxygen impurity and concentration of said oxygen impurity is not higher than 7.times.10.sup.19 atoms.multidot.cm.sup.-3 at an inside position of said semiconductor film. Also is disclosed a method for fabricating semiconductor devices mentioned hereinbefore, which comprises depositing an amorphous semiconductor film containing oxygen impurity at a concentration not higher than 7.times.10.sup.19 atoms.multidot.cm.sup.-3 by sputtering from a semiconductor target containing oxygen impurity at a concentration not higher than 5.times.10.sup.18 atoms.multidot.cm.sup.-3 in an atmosphere comprising hydrogen at not less than 10% in terms of partial pressure; and crystallizing said amorphous semiconductor film at a temperature of from 450.degree. C. to 700.degree. C.

Dependencies are inferred from the claim text.