Back to results
US 5,209,803 AGranted
Parallel plate reactor and method of use
AssigneeMatrix Integrated Systems, Inc.
InventorGary B. Powell
Life of this patent
Estimating the term…
Abstract
A parallel plate reactor having a grounded grid disposed between an RF powered electrode and a grounded electrode upon which a substrate is disposed. A method of utilizing the above apparatus consists of etching the substrate using a composition of 30-100% NF.sub.3 (nitrogen trifluoride) at 25 SCCM (standard cubic centimeter per minute) and 0-70% He (helium) at 75 SCCM to etch a layer of PECVD (plasma enhanced chemical vapor deposition) Si.sub.3 N.sub.4 (silicon nitride). The etching takes place at 200 mtorr to 5 torr pressure and 50-400 watts RF power.
Claims43
An apparatus for etching substrates comprising:
- an upper electrode coupled to an R-F power source;
- a lower electrode;
- a grid having openings defined therein disposed between said upper electrode and said lower electrode, said grid and said upper electrode forming an upper chamber therebetween,
- said grid being clamped to have the same potential at all times as the lower electrode and forming with said lower electrode a lower chamber therebetween;
- a lid being coupled to a first surface of said upper electrode such that said lid and said upper electrode define a gas mixing chamber therebetween;
- an insulator coupled to a second surface of said upper electrode and to a first surface of said grid, said insulator, upper electrode, and grid defining said upper RF chamber therebetween;
- a wall of said lower chamber having a first end coupled to said insulator;
- and
- a base coupled to a second end of said lower chamber wall such that said base, lower chamber wall, and grid form said lower chamber therebetween, said lower electrode being disposed in the lower chamber on said base.
6 more elements
An apparatus for etching substrates comprising:
- an upper electrode coupled to an RF power source wherein said upper electrode is laterally supported by the structure of said apparatus;
- a lower electrode;
- a grid disposed between said upper electrode and said lower electrode, said grid and said upper electrode forming an upper chamber therebetween;
- said grid being clamped to have the same potential at all times as the lower electrode and forming with said lower electrode a lower chamber therebetween;
- and
- a gas mixing chamber formed in the upper chamber.
3 more elements
An apparatus for etching substrates comprising:
- an upper electrode having a first surface, a second surface and defining an opening therein extending from said first surface to said second surface, said upper electrode electrically clamped to said grid, being coupled to a power source;
- a lid coupled to said first surface of said upper electrode, said lid and said upper electrode defining a gas mixing chamber therebetween;
- a first insulator having a first end coupled to said second surface of said upper electrode and a second end;
- a conductive grid coupled to said second end of said first insulator, said conductive grid, first insulator, and upper electrode defining a plasma chamber therebetween;
- a lower wall having a first end coupled to said second end of said first insulator and a second end;
- a base having a first surface coupled to said lower wall, wherein said base, lower wall, and conductive grid define a lower chamber;
- a lower electrode coupled to said first surface of said base and disposed in said lower chamber;
- and
- a reactant gas source coupled to said lid to provide a reactant gas to said gas mixing chamber.
6 more elements
An apparatus for etching substrates comprising:
- an upper electrode coupled to an RF power source wherein said upper electrode is laterally supported by the housing structure of said apparatus;
- a lower electrode;
- a grid disposed between said upper electrode and said lower electrode, said grid and said upper electrode forming an upper chamber therebetween;
- said grid, being clamped to have the same potential at all times as the lower electrode and forming with said lower electrode a lower chamber therebetween;
- means for centrally introducing gases into said apparatus, and
- a gas mixing chamber that is formed in said upper chamber.
3 more elements
An apparatus for etching substrates comprising:
- an upper electrode laterally supported by a housing structure of said apparatus and coupled to an RF power source;
- a lower electrode;
- a grid disposed between said upper electrode and said lower electrode, said grid and said upper electrode forming an upper chamber therebetween;
- and
- said grid being clamped to have the same potential at all times as the lower electrode and forming with said lower electrode a lower chamber therebetween.
2 more elements
An apparatus for etching substrates comprising:
- an upper electrode coupled to an RF power source wherein said upper electrode is laterally supported by the structure of said apparatus;
- a lower electrode;
- a grid disposed between said upper electrode and said lower electrode, said grid and said upper electrode forming an upper chamber therebetween;
- said grid being clamped to have the same potential at all times as the lower electrode and forming with said lower electrode a lower chamber therebetween;
- and
- means for centrally introducing gases into said apparatus.
3 more elements
An apparatus for etching substrates comprising:
- an upper electrode at one end of the apparatus having a laterally supported central portion coupled to an RF power source;
- a lower electrode;
- a grid disposed between said central portion of the upper electrode and said lower electrode, said grid and said central portion of the upper electrode forming an upper chamber therebetween;
- and
- said grid being clamped to have the same potential at all times as the lower electrode and forming with said lower electrode a lower chamber therebetween.
2 more elements
An apparatus for etching substrates comprising:
- a hollow, upper electrode closing one end of the apparatus, coupled to an RF power source and having a central opening in an end wall portion leading to the hollow,
- a lower housing supporting a lower electrode closing the other end of the apparatus,
- an insulative central housing connecting the upper electrode and lower housing,
- a grid supported by a housing portion between the upper and lower electrodes,
- the grid and upper electrode forming an upper chamber therebetween,
- the grid and lower electrode forming a lower chamber therebetween and clamped to have the same potential at all times, and
- a plurality of openings in a central wall portion of the upper electrode leading from the hollow to the upper chamber.
4 more elements
Dependencies are inferred from the claim text.