Resistive gate magnetic field sensor

A FET device for sensing a magnetic field, said FET device comprising:

• a semiconductor material having a source at a first position therein and receiving means at a second position therein for receiving charge carriers;
• bias voltage means for providing a bias voltage between said source and said receiving means to produce a movement of charge carriers in a direction between said source and said receiving means;
• a channel layer disposed within said semiconductor material between said source and said receiving means through which said charge carriers move in said direction as a function of said bias voltage, and said magnetic field being sensed having a strength and producing a deflection of said charge carriers from said direction, which deflection varies as a function of the strength of said magnetic field being sensed;
• a resistive gate having first and second resistive gate contacts respectively disposed at first and second ends of said resistive gate, said resistive gate disposed between said source and said receiving means and above said channel layer;
• resistive gate voltage means for providing a resistive gate bias voltage between said first and second resistive gate contacts to establish a longitudinal electric field in said channel layer;
• and
• output means comprising first and second electrode means, disposed in said semiconductor material and on opposite sides of said resistive gate, for producing output voltage signals related to the deflection of said charge carriers within said channel layer, which deflection is produced by the strength of the magnetic field sensed by said FET device.