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US 5,208,187 AGranted
Metal film forming method
OwnerKazuo Tsubouchi, Kazuya Masuinventors
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Abstract
A metal film forming method comprises steps of: forming a non-monocrystalline metal film principally composed of aluminum, in contact, at least in a part thereof, with a monocrystalline metal principally composed of aluminum; and heating the non-monocrystalline metal film to convert at least a part thereof into monocrystalline state.
Claims14
A metal film forming method for a semiconductor device, comprising the steps of:
- forming an insulation film on a principal surface of a semiconductor body;
- forming an aperture in said insulation film thereby exposing the surface of said semiconductor body therein;
- selectively depositing a first monocrystalline metal consisting essentially of aluminum, in said aperture;
- forming a non-monocrystalline metal film consisting essentially of aluminum on said first monocrystalline metal and on said insulation film by non-selective deposition;
- and
- heating said non-monocrystalline metal film to convert at least a part thereof to monocrystalline state, utilizing said first monocrystalline metal as a crystal seed.
3 more elements
A metal film forming method for a semiconductor device, comprising the steps of:
- forming an insulation film on a principal surface of a semiconductor body;
- forming an aperture in said insulation film thereby exposing the surface of said semiconductor body;
- selectively depositing a first monocrystalline metal consisting essentially of aluminum, in said aperture;
- forming a polycrystalline metal film consisting essentially of aluminum, on said first monocrystalline metal and on said insulation film;
- converting said polycrystalline metal film into amorphous or microcrystalline metal film;
- and
- heating said amorphous or microcrystalline metal film to convert at least a part thereof into monocrystalline state, by utilizing said first monocrystalline metal as a seed crystal.
4 more elements
Dependencies are inferred from the claim text.