Method for manufacturing a nonvolatile semiconductor memory device
AssigneeKabushiki Kaisha Toshiba
InventorSeiichi Mori
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Abstract
According to a method for manufacturing a nonvolatile semiconductor memory device, first, a CVD oxidation film is formed in a side wall portion of a floating gate formed on a semiconductor substrate. Then, a thermal oxidation film is formed between said floating gate and said CVD oxidation film by a thermal oxidation method. Additionally, before forming said CVD oxidation film, a thermal oxidation film may be formed in the side portion of said floating gate.
Claims18
A method for manufacturing a nonvolatile semiconductor memory device having a floating gate transistor in an element region on a major surface of a body of semiconductor material, the method comprising the steps of:
- depositing a first oxidation film on a side wall portion of a floating gate of said floating gate transistor using a CVD method;
- and
- subsequently forming a second oxidation film between said floating gate and said first oxidation film.
A method for manufacturing a nonvolatile semiconductor memory device having a floating gate transistor in an element region on a major surface of a body of semiconductor material, the method comprising the steps of:
- forming a first oxidation film on a side wall portion of a floating gate of said floating gate transistor using a thermal oxidation method;
- depositing a second oxidation film on the side wall portion of said floating gate using a CVD method;
- subsequently forming a third oxidation film between said floating gate and said second oxidation film.
A method for manufacturing a non-volatile semiconductor memory device, the method comprising the steps of:
- forming a first gate electrode insulatively spaced from a major surface of a body of semiconductor material and a second gate electrode superposed on and insulatively spaced from said first gate electrode;
- depositing a first oxidation film on said first and second gate electrodes;
- and
- thermally oxidizing a resultant structure to round edges of said first gate electrode and thereby forming a second oxidation film between said first oxidation film and said first and second gate electrodes.
Dependencies are inferred from the claim text.