Method of making a mask for proximity effect correction in projection lithography
AssigneeHewlett-Packard Company
InventorsFrederik Sporon-Fiedler, Nader Shamma, Edward Lin
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Abstract
Reticle data used to form a reticle pattern is modified to substantially compensate for proximity effects resulting from the diffraction of light by opaque portions of the reticle pattern. The reticle pattern is thus modified so that the exposed pattern on the wafer results in a desired pattern, wherein isolated features and features in a dense pattern of features formed on the wafer will be identical and have predictable characteristics.
Claims5
A method for manufacturing a mask or reticle for use in a fabrication process, wherein said mask or reticle is compensated for proximity effects, said method comprising the steps of:
- generating original mask or reticle data corresponding to an original mask or reticle pattern;
- adjusting said original mask or reticle data to produce a modified mask or reticle pattern which compensates for anticipated differences in features sizes between isolated features on a surface subjected to masked radiation and features within a dense pattern of features on said surface due to said proximity effects, said isolated features being not substantially affected by said proximity effects,
- wherein said step of adjusting comprises adjusting said original mask or reticle data to reduce a size of one or more opaque portions of said original mask or reticle pattern associated with said isolated features, with respect to opaque portions associated with features within said dense pattern of features, to compensate for differences between feature sizes due to said proximity effects;
- and
- producing a mask or reticle having a pattern corresponding to said modified mask or reticle pattern.
An improved mask or reticle for forming features on a surface in a fabrication process to compensate for proximity effects, said improved mask or reticle comprising:
- a mask or reticle having a pattern whose dimensions are adjusted to compensate for differences between feature sizes due to said proximity effects when said pattern is projected onto said surface, wherein said dimensions are adjusted to reduce a size of opaque portions in said pattern which form isolated features on said surface which are substantially unaffected by said proximity effects.
Dependencies are inferred from the claim text.