Portable semiconductor memory unit

Abstract

A semiconductor memory unit has a card body (1) with conductive panels (2, 2') on its surface. Insulating layers (10, 10') are provided on the inside of the conductive panels (2, 2'). A circuit board (5) is provided in the card body (1). A battery contacting member (8) is located close to one of the insulating layers (10, 10'), and is connected with a circuit grounding terminal. A portion (10a) of the insulating layer (10), which is opposed to the battery contacting member (8), is formed to have lower electrostatic breakdown voltage than the other portions of the insulating layers (10, 10'). Thus, when a high voltage ESD noise is applied to the conductive panels (2, 2'), the noise is discharged to the ground through the portion (10a) of the insulating layer (10) and the battery contacting member, so that the memory unit can be free from the bad influence of the noise.

Dependencies are inferred from the claim text.