Method of making single layer personalization
AssigneeSequoia Semiconductor, Inc.
InventorsJoanne M. Allen, Richard B. Hansen, Guntram K. Wolski, Keith R. Venes
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AssigneeSequoia Semiconductor, Inc.
InventorsJoanne M. Allen, Richard B. Hansen, Guntram K. Wolski, Keith R. Venes
Estimating the term…
A process for implementing logic units using base cells and implementing an electrical connection between the logic units in a gate array. The process includes determining a connection path between the base cells and connecting the base cells at the second metalization layer using a portion of the first metalization layer. This is possible due to the gate array having vertical first metalization layer segments of the first metalization layer positioned vertically in the channel between the rows of base cells, wherein each of the vertical segments has vias in the insulation layer between the first metalization layer and the second metalization layer at its endpoints for connecting the metalization layers. Similarly, the individual transistors which comprise the base cell are coupled using the second metalization layer to implement a specific logic unit.
A process for fabricating an electrical connection between base cells of different rows in a gate array comprising the steps of:
In a gate array having parallel rows of base cells, A process for fabricating a connection between base cells of different rows in a gate array comprising the steps of:
A process for fabricating a connection between base cells of different rows in a gate array comprising the steps of:
A process for fabricating an electrical connection between base cells of different rows comprising the steps of:
A process for fabricating a base cell for a designated function in a gate array comprising the steps of:
Dependencies are inferred from the claim text.