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US 5,204,989 AGranted
Charge sensing device
AssigneeNEC Corporation
InventorJunichi Yamamoto
Life of this patent
Estimating the term…
Abstract
In a charge transfer device, a low impurity density region is provided in its portion forming a floating capacitor. It becomes possible thereby to reduce the capacitance of the floating capacitor and thus to ensure a larger output voltage relative to a signal charge.
Claims2
A charge transfer device comprising:
- (a) a semiconductor material region of one conductivity type forming a channel of said charge transfer device
- (b) a plurality of charge transfer electrodes formed on the semiconductor material region with an interposed insulating film,
- (c) an output gate formed on the semiconductor material region with an interposed insulating film, adjacent to a terminal one of the charge transfer electrodes,
- (d) a reset gate formed on the semiconductor material region with an interposed insulating film, said reset gate being formed at a predetermined distance apart from the output gate,
- (e) a low impurity density region of one conductivity type formed in the semiconductor material region between the output gate and the reset gate, and
- (f) a high impurity density region of one conductivity type formed in the semiconductor material region at a side opposite to the low impurity density region relative to the reset gate,
- said low impurity density region having an impurity density which is lower than the impurity density of said semiconductor material region and said high impurity density region having an impurity density which is higher than the impurity density of said semiconductor material region.
4 more elements
Dependencies are inferred from the claim text.