Method for the manufacturing of a thyristor with defined lateral resistor

A method for manufacturing a thyristor with integrated lateral resistor comprising the steps of:

• generating in a semiconductor body of a first conductivity type a deposition layer of a second conductivity type with a predetermined doping concentration starting from a surface of the semiconductor body;
• introducing within an area for the resistor of the semiconductor body regularly arranged recesses in the deposition layer thereby leaving respective ribs between the recesses;
• adjusting the resistance value of a lateral resistor as defined by a width ratio of the recesses and the ribs within given tolerances;
• driving, by heating the semiconductor body, the deposition layer of the second conductivity type that has a predetermined doping concentration into the semiconductor body;
• generating thereby a further layer of the second conductivity type with a doping concentration that is lower than the predetermined doping concentration of the deposition layer;
• in the area for the resistor and due to the recesses, generating a defined lower doping concentration than in the further layer outside the area for the resistor;
• and due to the defined lower doping concentration in the area for the resistor, generating the lateral resistor having a defined resistance value within given tolerances.