Deposition of silicon dioxide films at temperatures as low as 100 degree C. by LPCVD using organodisilane sources
AssigneeAir Products and Chemicals, Inc.
InventorsDavid A. Roberts, Arthur K. Hochberg
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Abstract
Process for depositing films of silicon dioxide by a low pressure CVD method, utilizing 1,4 disilabutane as the silicon precursor and molecular oxygen as the oxygen source. The deposition process permits films to be put down on a substrate at temperatures as low as 100.degree. C. with essentially no carbon in the film. The 1,4 disilabutane can be used as a substitute for silane, a toxic, pyrophoric compressed gas.
Claims22
A low temperature chemical vapor deposition process comprising the steps of:
- heating a substrate to a temperature of from about 95.degree. C. to about 380.degree. C. in a vacuum;
- introducing into the vacuum a silicon-containing feed and an oxygen containing feed, said silicon containing feed consisting essentially of an organodisilane having the general formula
- H.sub.3 Si--CH(R)--[CH(R')]y--CH(R")--SiH.sub.3
- wherein
- y is 0, 1, 2, 3, 4, 5, 6 and
- R, R', and R" are independently selected from the group consisting essentially of H and C.sub.1 -C.sub.3 hydrocarbon;
- and
- maintaining said temperature and vacuum condition thereby causing a film of silicon dioxide to deposit on said substrate.
A low temperature chemical vapor deposition process comprising the steps of:
- heating a substrate to a temperature of from about 95.degree. C. to about 380.degree. C. in a vacuum;
- introducing into the vacuum a silicon-containing feed and an oxygen-containing feed, said silicon containing feed consisting essentially of an organodisilane having the general formula
- H.sub.3 Si--(CH.sub.2).sub.x --SiH.sub.3
- wherein x is 2,3,4,5 or 6;
- and
- maintaining said temperature and vacuum conditions thereby causing a film of silicon dioxide to deposit on said substrate.
A low temperature chemical vapor deposition process comprising the steps of:
- heating a substrate to a temperature of from about 95.degree. C. to about 380.degree. C. in a vacuum;
- introducing into the vacuum 1,4 disilabutane and oxygen gas;
- and
- maintaining said temperature and vacuum condition thereby causing a film of silicon dioxide to deposit on said substrate.
Dependencies are inferred from the claim text.