Plasma enhanced CVD process for fluorinated silicon nitride films
AssigneeInternational Business Machines Corporation
InventorsSon V. Nguyen, David M. Dobuzinsky, Douglas J. Dopp, David L. Harmon
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Abstract
A plasma enhanced chemical vapor deposition process for producing a fluorinated silicon nitride layer on a substrate is disclosed. The process utilizes a mixture of silane, perfluorosilane and nitrogen to produce films of high conformality and stability. The silane and perfluorosilane in the mixture are in a ratio of 0.05 to 1 on a volume basis. The preferred silane is SiH.sub.4 and the preferred perfluorosilane is SiF.sub.4.
Claims12
A process for producing a fluorinated silicon nitride film on a substrate comprising introducing into a film forming chamber a mixture essentially consisting of a silane, a perfluorosilane and nitrogen and applying electromagnetic radiation to said mixture to produce a plasma whereby said silicon nitride film is formed on said substrate;
- said mixture having a volume-to-volume ratio of said silane to said perfluorosilane from about 0.05 to about 3.
Dependencies are inferred from the claim text.