Apparatus for process for growing crystals of semiconductor materials

An apparatus for melting semiconductor material and growing single crystals of semiconductor material, the apparatus comprising:

• (a) a furnace,
• (b) a cylindrical double crucible assembly comprising a) an inner crucible open at a bottom thereof, in which single crystals of semiconductor material are grown, the inner crucible having side walls and being bottomless, and b) an outer crucible having a bottom in which melted semiconductor material is received, the outer crucible having the inner crucible disposed in contact with said outer crucible bottom in a separable manner,
• (c) a susceptor for supporting the outer crucible,
• (d) rotating means for rotating the susceptor,
• (e) a feed pipe for supplying starting material in the space formed between the inner and outer crucibles,
• (f) fluid-passage means for permitting the melted semiconductor material to flow between the inner and outer crucibles, the fluid-passage means being disposed at the lower part of the inner crucible,
• (g) heating means disposed to surround the susceptor for heating the semiconductor material in the double crucible,
• (h) at least two joining means for concentrically setting the inner crucible inside the outer crucible inside the furnace, said joining means being disposed at least at two circumferential locations relative to the inner crucible, separated by circumferential intervals,
• (i) engaging means coupled to said inner crucible at an upper end of said side walls, for detachably engaging with each said joining means at the upper end of the inner crucible, said inner crucible being adapted to operate with said joining means detached, and
• (j) drive means for providing vertical movement of either said inner or outer crucible.