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US 5,191,510 AGranted
Use of palladium as an adhesion layer and as an electrode in ferroelectric memory devices
AssigneeRamtron International Corporation
InventorMaria Huffman
Life of this patent
Estimating the term…
Abstract
A ferroelectric capacitor for a ferroelectric memory device includes a substrate, a silicon dioxide layer, a palladium adhesion layer, a bottom electrode of platinum, a metal or an alloy, a ferroelectric material and a top electrode of platinum, a metal or an alloy.
Claims26
A capacitor comprising:
- a substrate;
- a silicon dioxide layer located over said substrate;
- an adhesion layer, comprising palladium, located over said silicon dioxide layer;
- a bottom electrode located over said adhesion layer;
- a layer of ferroelectric material located over said bottom electrode;
- and
- a top electrode located over said layer of ferroelectric material.
4 more elements
A capacitor comprising:
- a substrate;
- a silicon dioxide layer located over said substrate;
- an adhesion layer located over said silicon dioxide layer;
- a bottom electrode located over said adhesion layer, said bottom electrode comprising an alloy of platinum and a metal;
- a layer of ferroelectric material located over said bottom electrode;
- and
- a top electrode located over said layer of ferroelectric material, said top electrode comprising a second alloy of platinum and a metal.
4 more elements
A capacitor comprising:
- a substrate;
- a silicon dioxide layer located over said substrate;
- an adhesion layer located over said silicon dioxide layer;
- a bottom electrode structure located over said adhesion layer, said bottom electrode structure comprising a first palladium layer, a first platinum layer over said first palladium layer and a second platinum layer over said first platinum layer;
- a layer of ferroelectric material located over said bottom electrode structure;
- and
- a top electrode structure located over said layer of ferroelectric material, said top electrode structure comprising a second palladium layer, a third platinum layer over said second palladium layer and a fourth platinum layer over said third platinum layer.
4 more elements
A capacitor comprising:
- a substrate;
- a silicon dioxide layer located over said substrate
- an adhesion layer located over said silicon dioxide;
- a bottom electrode structure located over said adhesion layer, said bottom electrode structure comprising a first platinum layer, a first palladium layer over said first platinum layer and a second platinum layer over said first palladium layer;
- a layer of ferroelectric material located over said bottom electrode structure;
- and
- a top electrode structure located over said layer of ferroelectric material, said top electrode structure comprising a third platinum layer, a second palladium layer over said third platinum layer and a fourth platinum layer over said second palladium layer.
4 more elements
Dependencies are inferred from the claim text.