Method of manufacturing an X-ray exposure mask and device for controlling the internal stress of thin films
AssigneeKabushiki Kaisha Toshiba
InventorsMasaru Hori, Masamitsu Itoh
Life of this patent
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Abstract
An X-ray mask can be manufactured by forming an X-ray transmitting thin film on a mask support, forming an X-ray absorber thin film on the X-ray transmitting thin film, and patterning the X-ray absorber thin film with a desired pattern to form an X-ray absorber pattern. Prior to the patterning, at least one inert element with an atomic number greater than that of neon is ion-implanted in the X-ray absorber thin film.
Claims17
A method of manufacturing an X-ray msk comprising the steps of:
- (a) forming an X-ray transmitting thin film on a mask support;
- (b) form an X-ray absorber thin film on said X-ray transmitting thin film;
- (c) patterning said X-ray absorbe thin film with a desired pattern to from an X-ray absorber pattern:
- and
- (d) ion-implanting, prior to step (c), at least one inert element with an atomic number greater than that of neon in only a surface layer of said X-ray absorber thin film.
A method of manufacturing an X-ray mask comprising the steps of:
- (a) forming an X-ray absorber thin film on a transparent support;
- (b) forming an X-ray absorber pattern by patterning said X-ray absorber thin film in desired pattern;
- and
- (c) implanting ions in the top and sides of said pattern by oblique ion implantation to said X-ray absorber pattern.
A method of manufacturing an X-ray mask comprising the steps of:
- (a) forming an X-ray transmitting thin film on a mask support,
- (b) forming an X-ray absorber thin film on said X-ray transmitting thin film,
- (c) patterning said X-ray absorber thin film to form an X-ray absorber pattern,
- (d) ion implanting, prior to step (c), at least one inert gas element with an atomic number greater than that of neon in only a surface layer of said X-ray absorber thin film such that said X-ray absorber thin film has a compressive stress no greater than 2.times.10.sup.8 dyn/cm.sup.2, and
- (e) heat-treating said X-ray absorber after process (d) such that the internal stress of said X-ray absorber pattern is no greater than 1.times.10.sup.8 dyn/cm.sup.2.
A method of manufacturing an X-ray mask comprising the steps of:
- (a) forming an X-ray transmitting thin film on a mask support,
- (b) forming an X-ray absorber thin film on said X-ray transmitting thin film,
- (c) patterning said X-ray absorber thin film to form an X-ray absorber pattern, and
- (d) while measuring the internal stress of said X-ray absorber thin film and controlling the quantity of ions implanted according to the measured internal stress, ion-implanting at least one inert gas element with an atomic number greater than that of neon in only a surface layer of said X-ray absorber thin film to reduce the internal stress of said X-ray absorber thin film so as to control said internal stress to a desired value.
A method of manufacturing an X-ray mask comprising the steps of:
- (a) forming an X-ray transmitting thin film on a mask support;
- (b) forming an X-ray absorber thin film on said X-ray transmitting thin film;
- (c) patterning said X-ray absorber thin film with a desired pattern to form an X-ray absorber pattern;
- and
- (d) ion-implanting, prior to step (c), at least one inert element having an atomic number greater than that of neon in a surface layer of said X-ray absorber thin film, thereby forming an internal stress-alleviating layer comprising said ion-implanted surface layer, leaving a non-implanted lower layer of said absorber thin film, said stress-alleviating layer reducing the internal stress of said X-ray absorber thin film by canceling its stress with the stress of said non-implanted lower layer.
Dependencies are inferred from the claim text.