Semiconductor device having multi-layered wiring, and method of manufacturing the same
AssigneeKahishiki Kaisha Toshiba
InventorHideki Shibata
Life of this patent
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Abstract
A semiconductor device comprising a substrate, a first metal wiring layer made of aluminum alloy and formed on the substrate, a conductive film made of doped polysilicon and formed on a selected part of the first metal wiring layer, an inter-layer insulation film made of plasma SiO.sub.2 and formed on the conductive film and the first metal wiring layer, a contact hole formed in the inter-layer insulation film and being larger than the conductive film, and a second metal wiring layer made of aluminum alloy, extending through the contact hole, and connected to the conductive film.
Claims2
A semiconductor device comprising:
- a semiconductor substrate;
- a first metal wiring layer made of Al alloy and formed on said substrate;
- a conductive film made of one material selected from the group consisting of polysilicon and silicide of metal having a high melting point, said conductive film being formed on a predetermined portion of said first metal wiring layer;
- an inter-layer insulating film formed on said first metal wiring layer and said conductive film;
- a contact hole formed in said inter-layer insulation film and having a diameter smaller than said conductive film;
- a second metal wiring layer made of metal having a high melting point, provided in said contact hole, and connected to said conductive film;
- and
- a third metal wiring layer made of Al alloy, formed on said second metal wiring layer, and electrically connected thereto.
A semiconductor device comparing:
- a semiconductor substrate;
- a first metal wiring layer made of Al alloy and formed on said semiconductor substrate;
- a conductive film made of one material selected from the group consisting of polysilicon and silicide of metal having a high melting point, said conductive film being formed on a predetermined portion of said first metal wiring layer;
- an inter-layer insulating film formed on said first metal wiring layer and said conductive film;
- a contact hole formed in said inter-layer insulation film and having a diameter smaller than said conductive film;
- a second metal wiring layer made of metal having a high-melting point and provided in a partial region within said contact hole;
- a third metal wiring layer made of metal having a high melting point and formed on said second metal wiring layer;
- and
- a fourth metal wiring layer made of Al alloy, formed on said third metal wiring layer, and electrically connected to said third metal wiring layer.
Dependencies are inferred from the claim text.