Silicon carbide semiconductor device
AssigneeSharp Kabushiki Kaisha
InventorsYoshihisa Fujii, Akira Suzuki, Katsuki Furukawa, Mitsuhiro Shigeta
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Abstract
A silicon carbide semiconductor device is disclosed which includes a semiconductor substrate and a silicon carbide single-crystal layer formed above the substrate, the silicon carbide single-crystal layer having a device active region. The silicon carbide semiconductor device further includes an aluminum nitride single-crystal layer which is disposed between the silicon carbide single-crystal layer and the substrate. The aluminum nitride single-crystal layer functions as an electrically insulating layer by which the silicon carbide signale-crystal layer is isolated electrically from the substrate.
Claims7
A silicon carbide semiconductor device comprising a semiconductor substrate and a silicon carbide single-crystal layer formed above said substrate, said silicon carbide single-crystal layer having a device active region, wherein an aluminum nitride single-crystal layer functioning as an electrically insulating layer is disposed between the silicon carbide single-crystal layer and the substrate.
A silicon carbide semiconductor device comprising:
- a semiconductor substrate;
- a first silicon carbide single-crystal layer formed on said semiconductor substrate;
- an aluminum nitride single-crystal layer functioning as an electrically insulating layer is disposed on the first silicon carbide single-crystal layer;
- and
- a second silicon carbide single-crystal layer formed on said aluminum nitride single-crystal layer, said second silicon carbide single-crystal layer having a device active region.
Dependencies are inferred from the claim text.