Back to results
US 5,184,198 AGranted
Special geometry Schottky diode
AssigneeSolid State Devices, Inc.
InventorMeir Bartur
Life of this patent
Estimating the term…
Abstract
Schottky barrier diode comprises a Schottky contact layer having an increased periphery to area ratio. In the illustrated embodiment, the Schottky contact layer comprises a plurality of individual contact regions interconnected by an overlying metallization layer.
Claims13
A Schottky barrier diode, comprising:
- a substrate having a plurality of sides;
- a Schottky metal contact layer in contact with a first side of the substrate to form said Schottky barrier diode, said Schottky metal contact layer comprising a plurality of individual Schottky contact regions;
- a first conductor electrically coupled to each of the Schottky contact regions;
- a second conductor electrically coupled to a second side of the substrate;
- and
- wherein each Schottky contact region is circular-shaped.
3 more elements
A Schottky barrier diode, comprising:
- a substrate having a plurality of sides;
- a Schottky metal contact layer in contact with a first side of the substrate to form said Schottky barrier diode, said Schottky metal contact layer comprising a plurality of individual Schottky contact regions;
- a first conductor electrically coupled to each of the Schottky contact regions;
- a second conductor electrically coupled to a second side of the substrate;
- and
- wherein each Schottky contact region is sunburst-shaped.
3 more elements
A Schottky barrier diode, comprising:
- a substrate having a plurality of sides;
- a Schottky metal contact layer in contact with a first side of the substrate to form said Schottky barrier diode, said Schottky metal contact layer comprising a plurality of individual Schottky contact regions;
- a first conductor electrically coupled to each of the Schottky contact regions;
- a second conductor electrically coupled to a second side of the substrate;
- and
- wherein each Schottky contact region has a saw-toothed shaped periphery.
3 more elements
A Schottky barrier diode, comprising:
- a substrate having a plurality of sides;
- a Schottky metal contact layer in contact with a first side of the substrate to form said Schottky barrier diode, said Schottky metal contact layer comprising a plurality of individual Schottky contact regions;
- a first conductor electrically coupled to each of the Schottky contact regions;
- a second conductor electrically coupled to a second side of the substrate;
- and
- wherein a portion of the periphery of each Schottky contact region has a concave segment.
3 more elements
A Schottky barrier diode, comprising:
- a substrate having a plurality of sides;
- a Schottky metal contact layer in contact with a first side of the substrate to form said Schottky barrier diode, said Schottky metal contact layer comprising a Schottky contact region having a periphery wherein a portion of the Schottky contact region periphery has a concave segment;
- a first conductor electrically coupled to the Schottky contact region;
- and
- a second conductor electrically coupled to a second side of the substrate.
2 more elements
A power Schottky barrier diode, comprising:
- an n-type semiconductor substrate having an epitaxial layer on a first side of the substrate;
- a Schottky metal contact region in contact with the epitaxial layer to form said power Schottky barrier diode, said Schottky metal contact region having a generally oblong shape;
- a first conductor electrically coupled to the Schottky metal contact region;
- and
- a second conductor electrically coupled to a second side of the substrate, wherein the periphery of the Schottky contact region has a saw-tooth shape.
2 more elements
A power Schottky barrier diode, comprising:
- an n-type semiconductor substrate having an epitaxial layer on a first side of the substrate;
- a Schottky metal contact region in contact with the epitaxial layer to form said power Schottky barrier diode, said Schottky metal contact region having a generally sunburst shape which defines a plurality of rays;
- a first conductor electrically coupled to the Schottky metal contact region;
- and
- a second conductor electrically coupled to a second side of the substrate,
- wherein the diode is designed to operate at currents in excess of 100 milliamps.
3 more elements
A Schottky barrier diode, comprising:
- a substrate having a plurality of sides;
- a Schottky metal contact layer in contact with a first side of the substrate to form said Schottky barrier diode, said Schottky metal contact layer comprising a plurality of individual Schottky contact regions;
- a first conductor electrically coupled to each of the Schottky contact regions;
- a second conductor electrically coupled to a second side of the substrate;
- and
- wherein each Schottky contact region is oval-shaped.
3 more elements
Dependencies are inferred from the claim text.