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US 5,183,782 AGranted
Process for fabricating a semiconductor device including a tungsten silicide adhesive layer
AssigneeSharp Kabushiki Kaisha
InventorsShigeo Onishi, Tsutomu Yamadai, Kazuya Ishihara
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Abstract
A process for fabricating a semiconductor device including the steps of: depositing a tungsten silicide adhesive layer over a wafer having a SiO.sub.2 insulating layer with a contact hole defined therein; treating the wafer by a rapid thermal annealing technique to impart further adherence to the tungsten silicide adhesive layer; and depositing tungsten over the tungsten silicide adhesive layer by CVD process to form a tungsten plug layer for electrical contact and a tungsten wiring layer.
Claims9
A process for fabricating a semiconductor device comprising the steps of:
- depositing a tungsten silicide adhesive layer over a wafer having a SiO.sub.2 insulating layer with a contact hole defined therein;
- then
- treating said wafer by a rapid thermal annealing technique to impart further adherence to said tungsten silicide adhesive layer;
- and then
- depositing tungsten over said tungsten silicide adhesive layer by CVD process to form a tungsten plug layer for electrical contact and a tungsten wiring layer.
2 more elements
Dependencies are inferred from the claim text.