Wet-etch process and composition
AssigneeAmoco Corporation
InventorsDouglas E. Fjare, Allyson J. Beuhler, Cynthia A. Navar
Life of this patent
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Abstract
A wet-etch composition for polyamic acids and partially cured polyamic acids containing an aqueous solution having a major portion of water, a substituted hydrocarbon solvent and a non-ionic base that is strong enough to deprotonate the polyamic acid or a partially cured polyamic acid in a weight ratio of 0.1-49:49-0.1, with the proviso that the composition contains less than 1.0 percent ionic base. The present invention further provides a process for wet-etching polyamic acids or partially cured polyamic acids.
Claims15
A process for selectively etching a polyamic acid layer comprising contacting the layer with a wet-etch composition containing an aqueous solution comprising at least 50 weight percent of the total composition of water, a substituted hydrocarbon solvent and an alkylamine wherein the weight ratio of the substituted hydrocarbon solvent to the alkylamine is about 0.1-49:49-0.1, with the proviso that the composition contains less than 1.0 percent ionic base.
A process for selectively etching a polyamic acid layer or a partially cured polyamic acid layer comprising
- a) applying a layer of polyamic acid to a substrate;
- b) applying a layer of positive photoresist material to the polyamic acid layer;
- c) shielding the layer of photoresist material with a mask having a pattern of openings that are positioned where the photoresist material is to be removed;
- d) exposing the photoresist material to actinic radiation through the pattern of openings in the mask to produce areas of exposed photoresist material and unexposed photoresist material;
- e) removing the mask;
- f) developing and removing the exposed photoresist material to reveal areas of the polyamic acid;
- g) etching the revealed polyamic acid with a wet-etch composition of an aqueous solution comprising at least 50 weight percent of the total composition of water, a substituted hydrocarbon solvent and an alkylamine wherein the weight ratio of the substituted hydrocarbon solvent to the alkylamine is about 0.1-49:49-0.1, with the proviso that the composition contains less than 1.0 percent ionic base;
- h) developing and removing the photoresist material;
- and
- i) imidizing the polyamic acid to a polyimide.
A process for selectively etching a polyamic acid or partially cured polyamic acid layer comprising contacting the polyamic acid layer with a wet-etch composition comprising an aqueous solution having at least 50 weight percent of the total composition water, an alcohol and an alkylamine wherein the weight ratio of the alcohol to the alkylamine is about 0.1-49:49-0.1, with the proviso that the composition contains less than 1.0 percent ionic base.
A process for etching a polyamic acid or partially cured polyamic acid layer comprising contacting the polyamic acid or partially cured polyamic acid layer with a wet-etch composition containing an aqueous solution comprising at least 50 weight percent of the total composition of water, a substituted hydrocarbon solvent and a non-ionic base wherein the weight ratio of the substituted hydrocarbon solvent to the non-ionic base is about 0.1-49:49-0.1, with the proviso that the composition contains less than 1.0 percent ionic base, wherein the wet-etch composition is maintained at a temperature of from about 0.degree. C. to about 60.degree. C. and wherein the polyamic acid or partially cured polyamic acid is derived from 2,2-bis[3,4-dicarboxyphenyl)-hexafluoropropane dianhydride and at least one diamine.
Dependencies are inferred from the claim text.