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US 5,183,530 AGranted
Method of manufacturing diamond thermistors
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Life of this patent
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Abstract
A method of manufacturing diamond thermistors is described. A pair of diamond contact regions having a low resistance are formed on a temperature sensing diamond substrate. The formation of the diamond contact regions is carried out by depositing a diamond film using a carbon compound gas and a dopant gas and etching the diamond film to leave the contact regions by an etchant comprising fluorine or oxygen.
Claims18
A method of manufacturing thermistors comprising:
- forming an impurity diamond film on a temperature sensing diamond substrate;
- selectively removing said impurity diamond film in order to leave a pair of contact regions;
- and
- forming a pair of electrodes respectively on the pair of said contact regions.
1 more element
A method of manufacturing thermistors comprising:
- forming an impurity diamond film on a temperature sensing diamond substrate;
- forming a pair of electrodes on said impurity diamond film;
- and
- selectively removing said impurity diamond film in order to leave a pair of contact regions by etching with said electrodes as a mask.
1 more element
Dependencies are inferred from the claim text.