Apparatus and process for chemical vapor deposition

A CVD apparatus, comprising:

• a plurality of gas-generating chambers, each of said gas-generating chambers comprising:
• a carrier gas inlet to inject a carrier gas into said gas-generating chamber,
• an effective gas-generating portion containing a solid source comprising a compound element of a compound film to be formed on a substrate,
• means for thermally isolating said effective gas-generating portion from effective gas-generating portions of other gas-generating chambers,
• a solid source heater to form an evaporated gas by heating and evaporating said solid source, and
• a gas outlet, said evaporated gas and said carrier gas flowing through said gas outlet;
• a gas-mixing chamber to form a mixed gas by receiving and mixing said evaporated gas and said carrier gas flowing through said gas outlet of each of said gas generating chambers, said gas-mixing chamber comprising:
• a mixed gas heater to heat said mixed gas, the solid source heaters and said mixed gas heater being located continuously over a region from said gas-generating chambers to said gas-mixing chamber, and
• a mixed gas outlet, said mixed gas flowing through said mixed gas outlet;
• a film-growing chamber arranged to receive said mixed gas flowing through said mixed gas outlet, said film-growing chamber containing said substrate on which said compound film is to be formed by vapor phase reaction, said film-growing chamber comprising:
• a substrate heating element to heat said substrate, and
• an exhaust gas outlet;
• and
• wherein said solid source heater of each of said gas-generating chambers, said mixed gas heater and said substrate heater are distinct from one another.