Method of detecting relative positional deviation between two objects

A method, usable with first and second objects placed at respective sites which are substantially conjugate with each other with respect to a projection lens system and with respect to a predetermined wavelength, for detecting a positional deviation between the first and second objects with respect to a direction perpendicular to an optical axis of the projection lens system, said method comprising the steps of:

• forming first and second grating marks of the first object and forming a third grating mark on the second object, wherein the first and second grating marks have grating lines which are substantially parallel to each other, and arranging the first and second grating marks with a predetermined spacing related to axial chromatic aberration of the projection lens system with respect to a difference between the predetermined wavelength and a wavelength different from the predetermined wavelength;
• irradiating the first and second grating marks with first and second radiation beams, each having wavelengths different from the predetermined wavelength, so that the first grating mark produces a substantially parallel positive first order diffraction beam while the second grating mark produces a substantially parallel negative first order diffraction beam;
• superposing, through the projection lens system, the positive first order diffraction beam and the negative first order diffraction beam upon on another on the third grating mark to form a beam spot thereat;
• causing interference between a first twice-diffracted beam produced as a result of diffraction of the positive first diffraction beam by the third grating mark in said superposing step and emanating substantially along the optical axis of the projection lens system, and a second twice-diffracted beam produced as a result of diffraction of the negative first order diffraction beam by the third grating mark in said superposing step and emanating substantially along the optical axis of the projection lens system, to produce an interference beam, wherein the interference beam has an intensity which is variable with a positional relationship between the beam spot and the third grating mark with respect to the perpendicular direction and said irradiating step comprises periodically changing phase difference between the first and second parallel radiation beams, to thereby modulate the intensity of the interference beam;
• detecting a relative positional deviation between the first and second objects with respect to the perpendicular direction, on the basis of the detection of the interference beam, wherein the first and second grating marks cooperate with each other to form, on the third grating mark and by use of the radiation beam and the projection lens system, an image of an imaginary alignment mark which is set at a side of the projection lens system remote from the first object;
• causing third and fourth reflection beams produced as a result of regular reflection of the first and second parallel radiation beams by the first and second grating marks, respectively, to interfere with each other to form a reference interference beam;
• and
• detecting the formed reference interference beam to produce a reference signal having a predetermined phase,
• wherein in said detecting step the interference beam is converted into a signal and, on the basis of a phase difference between the obtained signal and the reference signal, any relative positional deviation of the first and second objects is detected.

A method of detecting positional deviation between a first object having a grating pattern and a second object having a grating mark, wherein the first and second objects are placed at positions that are optically conjugate with each other with respect to a projection lens system and with reference to a first wavelength, wherein the grating pattern of the first object has spaced first and second zones that produce, when respectively illuminated with first and second beams, each having a second wavelength different from the first wavelength, first and second transmissively diffracted beams, respectivley, which are projected through the projection lens system upon the grating mark of the second object, said method comprising the steps of:

• illuminating the first zone with the first beam to produce the first transmissively diffracted beam as well as a first reflected beam from the first zone;
• illuminating the second zone with the second beam to produce the second transmissivley diffracted beam as well as a second reflected beam from the second zone;
• diffracting the first and second transmissively diffracted beams again by the grating mark of the second object to produce twice-diffracted beams which are then caused to interfere with each other to produce a first interference beam and wherein the first and second reflected beams are caused to interfere with each other to produce a second interference beam;
• periodically changing a phase difference between the first and second beams;
• and
• determining the positional deviation between the first and second objects on the basis of a phase difference between the first and second interference beams caused as a result of periodically changing the phase difference between the first and second beams in said changing step.

A semiconductor device manufacturing method for use with a reticle having a grating pattern and a wafer having a grating mark wherein positional deviation between the reticle and the wafer is detected and, after aligning the reticle and the wafer on the basis of the detection, an image of the reticle is projected through a projection lens system on the wafer by using an exposure beam having a first wavelength, the grating pattern of the reticle has spaced first and second zones that produce, when respectively illuminated with first and second beams, each having a second wavelength different from the first wavelength, first and second transmissively diffracted beams, respectively, which are projected through the projection lens system upon the grating mark of the wafer, said method comprising the steps of:

• illuminating the first zone with the first beam to produce the first transmissively diffracted beam as well as a first reflected beam from the first zone;
• illuminating the second zone with the second beam to produce the second transmissivley diffracted beam as well as a second reflected beam from the second zone;
• diffracting the first and second transmissively diffracted beams again by the grating mark of the second object to produce twice-diffracted beams which are then caused to interfere with each other to produce a first interference beam and wherein the first and second reflected beams are caused to interfere with each other to produce a second interference beam;
• periodically changing a phase difference between the first and second beams;
• and
• determining the positional deviation between the first and second objects on the basis of a phase difference between the first and second interference beams caused as a result of periodically changing the phase difference between the first and second beams in said changing step.

A projection exposure apparatus for projecting an image of a circuit pattern of a reticle upon a wafer by using a projection lens system and an exposure beam having a first wavelength, wherein the reticle has a grating pattern while the wafer has a grating mark, the grating pattern of the reticle having spaced first and second zones that produce, when respectively illuminated with first and second beams, each having a second wavelength different from the first wavelength, first and second transmissivley diffracted beams, respectively, which are projected through the projection lens system upon the grating mark of the wafer, said apparatus comprising:

• illuminating means for illuminating the first zone with the first beam to produce the first transmissively diffracted beam as well as a first reflected beam from the first zone, and for illuminating the second zone with the second beam to produce the second transmissively diffracted beam as well as a second reflected beam from the second zone;
• wherein the first and second transmissivley diffracted beams are diffracted again by the grating mark of the second object to produce first and second, twice-diffracted beams which are then caused to interfere with each other to produce a first interference beam and the first and second reflected beams are caused to interfere with each other to produce a second interference beam;
• first converting means for receiving the first interference beam to produce a first signal;
• second converting means for receiving the second interference beam to produce a second signal;
• changing means for periodically changing a phase difference between the first and second beams;
• and
• means for determining the positional deviation between the first and second objects on the basis of a phase difference between the first and second interference beams caused as a result of the changing made by said changing means.

A projection exposure apparatus for projecting an image of a circuit pattern of a reticle upon a wafer by a projection lens system and an exposure beam having a first wavelength, wherein the reticle has a grating pattern while the wafer has a grating mark, the grating pattern of the reticle having spaced first and second zones each of produce, when illuminated with a radiation beam having a second wavelength different from the first wavelength, a transmissively diffracted beam that is projected through the projection lens system upon the grating mark of the wafer, said apparatus comprising:

• a laser for producing the radiation beam;
• a polarization beam splitter for dividing the radiation beam produced by said laser into first and second beams having orthogonal planes of polarization;
• a modulator, disposed in a portion of a path of the radiation beam between said laser and said polarization beam splitter, for modulating the radiation beam to periodically change a phase difference between the first and second beams;
• quarter waveplate means for receiving the first and second beams from said polarization beam splitter, wherein the received first beam is then substantially perpendicularly incident on the first zone of the grating pattern of the reticle, while the received second beam is then substantially perpendicularly incident on the second zone of the grating pattern of the reticle, such that (i) transmissively diffracted beams are produced form the first and second zones, respectively, and (ii) first and second regularly reflected beams are also produced from the first and second zones, respectively, and wherein the transmissively diffracted beams are then diffracted by the grating mark of the wafer to produce twice-diffracted beams;
• first photoelectric converting means comprising a first analyzer, for receiving the twice-diffracted beams passed through said projection lens system and said quarter waveplate means, and for converting a first interference beam caused by interference of the twice-diffracted beams into a first signal;
• second photoelectric converting means comprising a second analyzer, for receiving the regularly reflected beams passed through said quarter waveplate means and said polarization beam splitter, and for converting a second interference beam caused by interference of the regularly reflected beams into a second signal;
• and
• means for receiving the first and second signals and for determining the positional deviation between the reticle and the wafer on the basis of a phase difference between the first and second signals.

A projection exposure apparatus for projecting an image of a circuit pattern of a reticle upon a wafer by a projection lens system and an exposure beam having a first wavelength, wherein the reticle has a grating pattern while the wafer has a grating mark, the grating pattern of the reticle having space first and second zones each of produce, when illuminated with a radiation beam having a second wavelength different from the first wavelength, a transmissivley diffracted beam that is projected through the projection lens system upon the grating mark of the wafer, said apparatus comprising:

• a laser for producing the radiation beam;
• first quarter waveplate means for transforming the radiation beam produced by said laser into a circularly polarized radiation beam;
• a polarization beam splitter for dividing the radiation beam from said first quarter waveplate means into first and second beams having orthogonal planes of polarization;
• a modulator, disposed in a portion of a path of the radiation beam between said first quarter waveplate means and said polarization beam splitter, for modulating the radiation beam to periodically change a phase difference between the first and second beams;
• second quarter waveplate means for receiving the first and second beams from said polarization beam splitter, wherein the received first beam is then substantially perpendicularly incident on the first zone of the grating pattern of the reticle, while the received second beam is then substantially perpendicularly incident on the second zone of the grating pattern of the reticle, such that (i) the transmissively diffracted beams are produced from the first and second zones, respectively, and (ii) the first and second regularly reflected beams are also produced from the first and second zones, respectively, wherein the transmissivley diffracted beams are then diffracted by the grating mark of the wafer to produce twice-diffracted beams;
• first photoelectric converting means comprising a first analyzer, for receiving the twice-diffracted beams passed through said projection lens system and said second quarter waveplate means, and for converting a first interference beam caused by interference of the twice-diffracted beams into a first signal;
• second photoelectric converting means comprising a second analyzer, for receiving the regularly reflected beams passed through said second quarter waveplate means and said polarization beam splitter, and for converting a second interference beam caused by interference of the regularly reflected beams into a second signal;
• and
• means for receiving the first and second signals and for determining the positional deviation between the reticle and the wafer on the basis of determining whether the first signal comprises a DC signal or an AC signal, when the second signal comprises a DC signal through modulation of the first and second beams by said modulator.

A method of detecting positional deviation between a first object having a grating pattern and a second object having a grating mark, wherein the first and second objects are placed at positions that are optically conjugate with each other with respect to a projection lens system and with reference to a first wavelength, the grating pattern of the first object has spaced first and second zones that produce, when respectively illuminated with first and second beams, each having a second wavelength different from the first wavelength, first and second transmissivley diffracted beams, respectively, which are projected through the projection lens system upon the grating mark of the second object, said method comprising the steps of:

• illuminating the first zone with the first beam to produce the first transmissively diffracted beam as well as a first reflected beam from the first zone;
• illuminating the second zone with the second beam to produce the second transmissivley diffracted beam as well as a second reflected beam from the second zone;
• diffracting the first and second transmissively diffracted beams again by the grating mark of the second object to produce twice-diffracted beams which are then caused to interfere with each other to produce a first interference beam and wherein the first and second reflected beams are caused to interfere with each other to produce a second interference beam;
• periodically changing a phase difference between the first and second beams;
• and
• determining the positional deviation between the first and second objects on the basis of a change in intensity of the first interference beam caused when the phase difference between the first and second beams is periodically changed, but while the intensity of the second interference light is maintained substantially unchanged, in said changing step.

A semiconductor device manufacturing method for use with a reticle having a grating pattern and a wafer having a grating mark, wherein positional deviation between the reticle and the wafer is detected and, after aligning the reticle and the wafer on the basis of the detection, an image of a circuit pattern of the reticle is projected on the wafer by a projection lens system and an exposure beam having a first wavelength, the grating pattern of the reticle having spaced first and second zones that produce, when respectively illuminated with first and second beams, each having a second wavelength different from the first wavelength, first and second transmissively diffracted beams, respectively, which are projected through the projection lens system upon the grating mark of the wafer, said method comprising the steps of:

• illuminating the first zone with the first beam to produce the first transmissively diffracted beam as well as a first reflected beam from the first zone;
• illuminating the second zone with the second beam to produce the second transmissivley diffracted beam as well as a second reflected beam from the second zone;
• diffracting the first and second transmissively diffracted beams again by the grating mark of the second object to produce twice-diffracted beams which are then caused to interfere with each other to produce a first interference beam and wherein the first and second reflected beams are caused to interfere with each other to produce a second interference beam;
• periodically changing a phase difference between the first and second beams;
• and
• determining the positional deviation between the reticle and the wafer on the basis of a change in intensity of the first interference beam caused when the phase difference between the first and second beams is periodically change, but while the intensity of the second interference light is maintained substantially unchanged, in said changing step.

A projection exposure apparatus for projecting an image of a circuit pattern of a reticle upon a wafer by a projection lens system and an exposure beam having a first wavelength, wherein the reticle has a grating pattern while the wafer has a grating mark, the grating pattern of the reticle having spaced first and second zones that produce, when respectively illuminated with first and second beams, each having a second wavelength different from the first wavelength, first and second transmissivley diffracted beams, respectively, which are projected through the projection lens system upon the grating mark of the wafer, said apparatus comprising:

• illuminating means for illuminating the first zone with the first beam to produce the first transmissively diffracted beam as well as a first reflected beam from the first zone, and for illuminating the second zone with the second beam to produce the second transmissively diffracted beam as well as a second reflected beam from the second zone;
• wherein the first and second transmissivley diffracted beams are diffracted again by the grating mark of the second object to produce first and second, twice-diffracted beams which are then caused to interfere with each other to produce a first interference beam and the first and second reflected beams are caused to interfere with each other to produce a second interference beam;
• first converting means for receiving the first interference beam to produce a first signal;
• second converting means for receiving the second interference beam to produce a second signa;;
• changing means for periodically changing a phase difference between the first and second beams;
• and
• means for receiving the first and second signals and for determining the positional deviation between the reticle and the wafer on the basis of determining whether the first signal comprises a DC signal or an AC signal, when the second signal comprises a DC signal through periodically changing the phase difference between the first and second beams by said changing means.

A method of detecting positional deviation between a first object having a grating pattern and a second object having a grating mark, wherein the first and second objects are placed at positions that are optically conjugate with each other with respect to a projection lens system and with reference to a first wavelength, the grating pattern of the first object has spaced first and second zones that produce, when respectively illuminated with first and second beams, each having a second wavelength different from the first wavelength, first and second transmissively diffracted beams, respectively, which are projected through the projection lens system upon the grating mark of the second object, said method comprising the steps of:

• illuminating the first zone with the first beam to produce the first transmissively diffracted beam as well as a first reflected beam from the first zone;
• illuminating the second zone with the second beam to produce the second transmissivley diffracted beam as well as a second reflected beam from the second zone;
• diffracting the first and second transmissively diffracted beams again by the grating mark of the second object to produce twice-diffracted beams which are then caused to interfere with each other to produce a first interference beam, and wherein the first and second reflected beams are caused to interfere with each other to produce a second interference beam;
• and
• determining the positional deviation between the first and second objects on the basis of the first and second interference beams.