Method for modifying wiring of semiconductor device

A method for modifying wiring of an LSI semiconductor device having a multilayer interconnection on a semiconductor substrate, including the steps of:

• forming a plurality of fine holes through an insulating film to expose selected internal lines in the semiconductor device;
• sputtering a thin buffer film less than 1000 .ANG. thick over an upper surface of the insulating film and in said fine holes;
• forming an additional connection line on said buffer film by energy beam CVD only along a preselected narrow path that interconnects at least two of the fine holes;
• etching the buffer film and the additional connection line until an exposed portion of said buffer film is removed;
• reducing the resistance of the additional connection line by annealing said additional connection line;
• and
• forming an insulating film at least on said additional connection line to cover the additional connection line with an insulating film.

A method for modifying wiring of a semiconductor device having a multilayer interconnection on a semiconductor substrate, the method including:

• forming a plurality of fine holes through an insulating film by radiation of a converged ion beam to at least two internal lines in the semiconductor device to expose said internal lines;
• sputtering a thin buffer film less than 1000 .ANG. including at least one of chromium, titanium, titanium nitride, and tungsten an upper surface of the insulating film and in said fine holes;
• depositing an additional connection line in and between said fine holes along a preselected path on said buffer film with energy beam CVD including at least one of molybdenum, tungsten, and aluminum to interconnect electrically said at least two internal lines;
• removing an exposed buffer film portion adjacent the additional connection line along the preselected path;
• annealing said additional connection line to reduce the resistance thereof by radiating an energy beam on the additional connection line in one of (i) a vacuum, (ii) an atmosphere of an inert gas, and (iii) a reducing gas;
• and
• forming another insulating film at least on said additional connection line with an energy beam CVD to cover the additional connection line with said other insulating film.

A method for modifying electron flow paths of a semiconductor device which has internal electron carrying lines embedded between semiconductor layers, the method comprising:

• forming at least first and second holes through at least one insulation layer to expose preselected first and second internal lines;
• forming a thin buffer film through a mask along a path from the exposed first internal line along a surface of the insulating layer and through the first and second fine holes to the second exposed internal line;
• forming an electrical connection line on the thin buffer film electrically interconnecting the first and second exposed internal lines;
• covering at least exposed portions of the internal lines and the additional electrical connection line with an insulating layer.