Electrically programmable antifuse incorporating dielectric and amorphous silicon interlayer
AssigneeActel Corporation
InventorAbdul R. Forouhi
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Abstract
An antifuse may be fabricated as a part of an integrated circuit in a layer located above and insulated from the semiconductor substrate. The antifuse includes a lower first electrode, a first dielectric layer disposed over the lower first electrode, a layer of amorphous silicon disposed above the first dielectric layer, a second dielectric layer disposed above the amorphous silicon layer, and an upper second electrode disposed above the second dielectric layer.
Claims48
An electrically programmable antifuse element disposed over an insulating layer covering active elements disposed in a semiconductor substrate in an integrated circuit, said antifuse comprising:
- a first electrode disposed over said insulating layer;
- a first dielectric layer disposed over said first electrode;
- an antifuse layer disposed over said first dielectric layer;
- a second dielectric layer disposed over said antifuse layer;
- a second electrode disposed over said second dielectric layer.
The electrically programmable antifuse element of claim wherein said first electrode is formed from a material selected from the group of Al, AlSiCu, TiW, and W.
The electrically programmable antifuse element of claim wherein said second electrode is formed from a material selected from the group of Al, AlSiCu, TiW, and W.
The electrically programmable antifuse element of claim wherein said antifuse layer is formed from a hydrogenated amorphous silicon film.
The electrically programmable antifuse element of claim wherein said antifuse layer is formed from an amorphous silicon
The electrically programmable antifuse element of claim wherein said antifuse layer is formed from a polycrystalline silicon film.
The electrically programmable antifuse element of claim wherein said antifuse layer is doped.
The electrically programmable antifuse element of claim wherein said antifuse layer is doped.
The electrically programmable antifuse element of claim wherein the hydrogen content of said hydrogenated amorphous silicon layer is in the range of from about 5-40%.
The electrically programmable antifuse element of claim wherein the hydrogen content of said hydrogenated amorphous silicon layer is about 10%.
The electrically programmable antifuse element of claim wherein the hydrogen content of said first and second dielectric layers is between about 5-40%.
The electrically programmable antifuse element of claim wherein the hydrogen content of said first and second dielectric layers is about 10%.
The electrically programmable antifuse element of claim wherein x=3 and y=4.
The electrically programmable antifuse element of claim wherein said adhesion-promoting layer is formed from a material selected from the group containing Ti and TiW.
A semiconductor device disposed on a semiconductor substrate including a plurality of electrically programmable low impedance antifuse elements, each of said antifuse elements disposed over an insulating layer over said substrate and comprising:
- a first electrode disposed over said insulating layer;
- a first dielectric layer disposed over said first electrode;
- an antifuse layer disposed over said first dielectric layer;
- a second dielectric layer disposed over said antifuse layer;
- a second electrode disposed over said second dielectric layer.
Dependencies are inferred from the claim text.