Complementary semiconductor device having improved device isolating region

A complementary semiconductor device comprising a first region of a first conductivity type formed on a main surface of a substrate of said first conductivity type and a second region of a second conductivity type different from said first conductivity type formed adjacent said first region, said complementary semiconductor device comprising:

• a third region of the second conductivity type formed in said first region;
• a fourth region of the first conductivity type formed in said second region;
• a fifth region of the first conductivity type formed in said first region and between said third region and said second region;
• a sixth region of the second conductivity type formed in said second region and between said fourth region and said first region;
• a first electrode on and insulated from said first region and maintained at a first fixed potential for preventing conduction between said second region and said third region;
• and
• a second electrode on and insulated from said second region and maintained at a second fixed potential for preventing conduction between said first region and said fourth region.

A complementary semiconductor device comprising a first region of a first conductivity type formed on a main surface of a substrate of said first conductivity type and a second region of a second conductivity type different from said first conductivity type formed adjacent said first region, said complementary semiconductor device comprising:

• a third region of the second conductivity type formed in said first region;
• a fourth region of the first conductivity type formed in said second region;
• first field shield means formed on said first region for preventing conduction between said second region and said third region;
• and
• second field shield means formed on said second region for preventing conduction between said first region and said fourth region;
• and
• third field shield means formed between said first region and said second region on the main surface of said substrate.

A complementary semiconductor device comprising a first region of a first conductivity type formed on a main surface of a substrate of said first conductivity type and a second region of a second conductivity type different from said first conductivity type formed adjacent said first region, said complementary semiconductor device comprising:

• a third region of the second conductivity type formed in said first region;
• a fourth region of the first conductivity type formed in said second region;
• first conduction controlling means formed on said first region for preventing conduction between said second region and said third region;
• second conduction controlling means formed on said second region for preventing conduction between said first region and said fourth region;
• and
• a fifth electrically conductive region formed on the main surface of said substrate in said first and second regions at the junction between said first region and said second region.

A complementary semiconductor device comprising a first region of a first conductivity type formed on a main surface of a substrate of said first conductivity type and a second region of a second conductivity type different from said first conductivity type formed adjacent said first region, said complementary semiconductor device comprising:

• a third region of the second conductivity type formed in said first region;
• a fourth region of the first conductivity type formed in said second region;
• a first electrode formed on said first region and maintained at a fixed potential for preventing conduction between said second region and said third region;
• a second electrode formed on said second region and maintained at a fixed potential for preventing conduction between said first region and said fourth region;
• and
• a third electrode formed between said first region and said second region on the main surface of said substrate and maintained at a fixed potential.