PIN diode with a low peak-on effect
AssigneeSGS-Thomson Microelectronics S.A.
InventorRobert Pezzani
Life of this patent
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Abstract
A PIN diode with a low voltage peak at the switching on comprises a P-type anode region (4) formed on a first surface of a low doped N-type substrate (1) and a cathode region (2) formed on the second surface of the substrate. The PIN diode comprises on a portion of the first surface an additional N.sup.+ -type region (7) in contact with the anode region for forming a junction with the latter. The additional region is connected to the cathode region.
Claims6
A PIN diode with protection against transient overvoltages comprising a P-type anode region formed above a low doped N-type substrate;
- a cathode region formed below the substrate;
- and an additional N.sup.+ -type region forming a junction with the anode region;
- said additional region being connected to the cathode region through a path outside semiconductor regions of said diode of said substrate.
A semiconductor device having first and second terminals comprising:
- a low doped N-type substrate having a first surface and a second surface;
- a P-type region formed on said first surface above the substrate and connected to said first terminal;
- a N-type region formed on said second surface below the substrate and connected to said second terminal;
- and
- a means for reducing overvoltages developed at said first and second terminals as a result of changing a polarity of voltage applied between said first and second terminals, said means including an additional N-type region forming a junction with said P-type region and being directly connected to said second terminal through a path outside semiconductor regions of said semiconductor device.
A semiconductor diode having first and second terminals comprising:
- a low doped substrate of a first conductivity type having a first surface and a second surface;
- a region of a conductivity type opposite said substrate formed on said first surface above the substrate and connected to said first terminal;
- a region of the first conductivity type formed on said second surface below the substrate and connected to said second terminal;
- and
- a means for reducing transient overvoltages developed at said first and second terminals, said means including an additional region of the first conductivity type forming a junction with said region of the opposite conductivity type and being connected to said second terminal through a path outside semiconductor regions of said semiconductor diode.
Dependencies are inferred from the claim text.