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US 5,180,687 AGranted
Deposited film formation method utilizing selective deposition by use of alkyl aluminum hydride
AssigneeCanon Kabushiki Kaisha
InventorsNobuo Mikoshiba, Kazuo Tsubouchi, Kazuya Masu
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Abstract
By providing a deposited film formation method in which aluminum or a metal composed mainly of aluminum of good quality is selectively deposited according to the CVD method utilizing an alkyl aluminum hydride and hydrogen, and then pure aluminum or a metal composed mainly of aluminum is non-selectively deposited, it becomes possible to form an electroconductive film of good quality within fine openings or on an insulating layer.
Claims21
A deposited film formation method comprising the steps of:
- (a) selectively forming by chemical vapor depositing a metal deposit composed mainly of aluminum on an electron donative surface of a substrate having said electron donative surface and a non-electron donative surface by employing an alkyl aluminum hydride as a raw gas material;
- and
- (b) non-selectively forming a metal film composed mainly of aluminum on said selectively formed metal deposit and on said non-electron donative surface by a deposition method different from said chemical vapor deposition.
A deposited film formation method comprising the steps of:
- (a) selectively forming by chemical vapor depositing a metal deposit composed mainly of aluminum on an electron donative surface of a substrate having said electron donative surface and a non-electron donative surface by employing an alkyl aluminum hydride as a raw gas material;
- and
- (b) non-selectively forming a metal film composed mainly of aluminum on said selectively formed metal deposit and on a modified non-electron donative surface.
Dependencies are inferred from the claim text.