Thin film deposition apparatus
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorHiroki Ito
Life of this patent
Estimating the term…
Abstract
In a thin film deposition apparatus, a vapor generation source including a crucible containing a desposition material is disposed inside an ionization means, the crucible being disposed below a cathode filament. Since the upper section of the crucible is heated by the heat of the filament, the creeping up of a molten metal deposition material having a good wettability can be suppressed. Also, the temperature of a surrounding anode is maintained higher than the melting point of the deposition material because the crucible disposed in the ionization means is heated. Therefore, the deposition of the material onto the anode can be prevented.
Claims5
A thin film deposition apparatus comprising:
- a vacuum chamber in which a predetermined vacuum is maintained;
- a means for mounting a substrate placed inside the vacuum chamber;
- a crucible placed in such a manner as to oppose the substrate inside the vacuum chamber for housing a deposition material whose metallic ions impinge the substrate;
- a heater disposed around the crucible for heating the crucible;
- a cathode filament placed in the vicinity of the opening of the crucible;
- and
- an anode disposed in such a manner as to surround the crucible, the heater and the cathode, wherein said anode is adapted to be maintained at a temperature higher than the melting point of said deposition material.
Dependencies are inferred from the claim text.