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US 5,179,042 AGranted
Process for forming deposited film by use of alkyl aluminum hydride
AssigneeCanon Kabushiki Kaisha
InventorsNobuo Mikoshiba, Kazuo Tsubouchi, Kazuya Masu
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Abstract
A process for forming an Al film of good quality according to the CVD method utilizing the reaction between alkyl aluminum hydride and hydrogen, which is an excellent deposited film formation process also capable of selective deposition of A1.
Claims21
A process for forming a deposited film comprising the steps of:
- (a) providing a substrate having an electron donative surface (A) in a space for formation of the deposited film,
- (b) introducing a gas of the an alkyl aluminum hydride and hydrogen gas into said space for formation of deposited film, and
- (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450.degree. C. to form an aluminum film on said electron donative surface (A).
A process for forming a deposited film comprising the steps of:
- (a) providing a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for formation of the deposited film,
- (b) introducing a gas of an alkyl aluminum hydride and hydrogen gas into said space for formation of the deposited film, and
- (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450.degree. C. to form an aluminum film selectively on said electron donative surface (A).
Dependencies are inferred from the claim text.