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US 5,178,718 AGranted
Method of manufacturing a semiconductor device
AssigneeU.S. Philips Corporation
InventorsMarco S. De Keijser, Christianus J. M. Van Opdorp
Life of this patent
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Abstract
The invention relates to a method of manufacturing a semiconductor device by means of a cyclical epitaxial process from a gas phase by which alternate monoatomic layers of the III atom and the V atom of a III-V compound are formed. Layers of very good quality are obtained when atomic hydrogen is conducted to the substrate on which epitaxial growth takes place during a part of each cycle in which the gas phase is free from a compound of the III atom.
Claims6
A method of manufacturing a semiconductor device by epitaxial growth from a gas phase comprising the steps of
- (a) providing a monocrystalline substrate on a susceptor, and
- (b) carrying out a number of growth cycles on a surface of said substrate to form alternate monoatomic layers of group III and group V elements by forming in each cycle a monoatomic layer of said group III element and a monoatomic layer of said group V element, and by separately flowing only atomic hydrogen over said surface for part of each cycle.
Dependencies are inferred from the claim text.