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AssigneeTexas Instruments Incorporated
InventorsDavid J. McElroy, Sebastiano D'Arrigo, Manzur Gill, Sung-Wei Lin
Estimating the term…
A method is described for programming an array of EEPROM cells. Programming occurs through a Fowler-Nordheim tunnel window (34) between a source bitline (24) and a floating gate conductor (42) of a selected cell. The voltages applied to the control gate and to the source are selected to differ sufficiently to cause electrons to be drawn through the tunnel window (34) from the source region (24) to the floating gate conductor (42). The non-selected bitlines have a voltage impressed thereon that is of sufficient value to prevent inadvertent programming of cells in the selected row. The non-selected wordlines (48) have a voltage impressed thereon that is of sufficient value to prevent erasing of programmed non-selected cells.
A method for programming a selected memory cell in an array of said cells, said selected memory cell connected to a selected wordline and a selected bitline, said array containing at least a first non-selected memory cell connected to said selected wordline and to a non-selected bitline, said method comprising:
A method for programming a selected memory cell in an array of such cells, said selected memory cell connected to a selected wordline and a selected bitline, said array including a first non-selected memory cell connected to said selected wordline and to a non-selected bitline, said array including a second non-selected memory cell connected to said non-selected bitline and to a non-selected wordline, said method comprising:
Dependencies are inferred from the claim text.