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US 5,177,592 AGranted
Semiconductor device
AssigneeNippon Precision Circuits Inc.
InventorsKatsuyuki Takahashi, Kenji Kodera, Mutsumi Sasaki
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AssigneeNippon Precision Circuits Inc.
InventorsKatsuyuki Takahashi, Kenji Kodera, Mutsumi Sasaki
Estimating the term…
A semiconductor includes a conductor layer formed on one side thereof toward a first surface of a substrate, and a first interlayer insulation layer on the conductor layer. The first interlayer insulation layer has a first opening extending therethrough to the conductor layer. A first wiring layer is provided on the first interlayer insulation layer, and connected to the conductor layer via the first opening. A second interlayer insulation layer is formed on the first wiring layer and has a second opening extending through the first opening to the first wiring layer. A second wiring layer is formed on the second interlayer insulation layer and extends through the second interlayer to the first wiring layer and/or the conductor layer via the first opening and the second opening.
A semiconductor device comprising:
A semiconductor device comprising:
In a semiconductor device having a substrate, a field insulation layer on the substrate, a first interlayer insulation layer on the side of said device toward said substrate, a first wiring layer on the first interlayer insulation layer, a second interlayer insulation layer on the first wiring layer, said second interlayer insulation layer having an opening extending therethrough to said first wiring layer, and a second wiring layer on said second interlayer insulation layer and extending through said opening to be electrically connected to said first wiring layer, the improvement comprising a conductor layer on said field insulation layer, said first interlayer insulation layer being formed o said conductor layer and having an opening extending therethrough to said conductor layer, said first wiring layer extending through said opening in said first interlayer insulation layer to said conductor layer, said opening in said second interlayer insulation layer being aligned with said opening in said first interlayer insulation layer.
Dependencies are inferred from the claim text.