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US 5,177,585 AGranted
P-N-P diamond transistor
AssigneeGersan Establishment
InventorChristopher M. Welbourn
Life of this patent
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Abstract
The present invention provides a P-N-P diamond transistor and a method of manufacture thereof. The transistor comprises a diamond substrate having two p-type semiconducting regions separated by an insulating region with an n-type semi-conducting layer established by chemical vapour deposition. Preferably the p-type regions are obtained by doping with boron and controlling the concentration of nitrogen impurities by the use of nitrogen getters. The n-type layer preferably contains phosphorus.
Claims12
A method of manufacturing a transistor comprising the steps of:
- providing a diamond substrate,
- doping two separate regions of the substrate with a p-type impurity to form respective semiconducting regions, and
- using chemical vapour deposition to provide an n-type layer of semiconducting diamond, whereby a P-N-P transistor structure is obtained.
A transistor comprising;
- a diamond substrate having two p-type semiconducting regions, and an n-type semiconducting layer established by chemical vapour deposition, whereby a P-N-P structure is formed.
Dependencies are inferred from the claim text.