Process for fabricating a semiconductor device using re-ionized rinse water
AssigneeMotorola, Inc.
InventorPaul M. Winebarger
Life of this patent
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Abstract
A process for fabricating a semiconductor device uses re-ionized water, such as carbonated water, to rinse the device while preventing microcorrosion of metal layers. In one embodiment of the invention, a semiconductor wafer is provided having an overlying metal layer and a patterned layer overlying the overlying metal layer. Selected portions of the overlying metal layer are etched using the patterned layer as an etch mask. The patterned layer is removed by immersing the device in an organic solution without affecting the remaining metal layer. The device is then rinsed in a reservoir of re-ionized water to remove the organic solution from the device while preventing microcorrosion of the remaining metal layer.
Claims17
A process for fabricating a semiconductor device using re-ionized rinse water to prevent metal microcorrosion, comprising the steps of:
- providing a semiconductor substrate;
- depositing a metal layer overlying the semiconductor substrate;
- depositing an imagable material overlying the metal layer and the semiconductor substrate;
- exposing selected portions of the imagable material to radiation;
- developing the imagable material by immersing the device in an aqueous solution such that the selected portions of the imagable material are removed;
- and
- rinsing the semiconductor device to remove the aqueous solution,
- wherein the step of rinsing the semiconductor device comprises the sequential steps of:
- rinsing the semiconductor device in a reservoir of basic solution to prevent precipitation of the imagable material;
- and
- rinsing the semiconductor device in a reservoir of re-ionized water to remove the aqueous solution and the basic solution from the device while preventing microcorrosion of the metal layer.
A process for fabricating a semiconductor device using re-ionized rinse water to prevent metal microcorrosion, comprising the steps of:
- providing a semiconductor wafer having an overlying metal layer and a patterned layer overlying the overlying metal layer;
- etching selected portions of the overlying metal layer using the patterned layer as an etch mask;
- removing the patterned layer by immersing the device in an organic solution without altering remaining portions of the overlying metal layer;
- and then
- rinsing the semiconductor device in a reservoir of re-ionized water to remove the organic solution from the semiconductor device while preventing microcorrosion of the remaining portions of the overlying metal layer.
A process for fabricating a semiconductor device using re-ionized rinse water to prevent metal microcorrosion, comprising the steps of:
- providing a semiconductor wafer having an overlying metal layer;
- depositing photoresist on the overlying metal layer;
- exposing selective portions of the photoresist to radiation;
- developing the photoresist in an aqueous solution to remove the portions of photoresist exposed to radiation;
- and
- rinsing the semiconductor device to remove the aqueous solution,
- wherein the step of rinsing the semiconductor device comprises the sequential steps of:
- rinsing the semiconductor device in a reservoir of alkaline solution to remove the aqueous solution from the semiconductor device and to prevent precipitation of the aqueous solution;
- and
- rinsing the semiconductor device in a reservoir of saturated carbonated water to remove traces of the aqueous solution and the alkaline solution from the semiconductor device without corroding the overlying metal layer.
A process for fabricating a semiconductor device using re-ionized rinse water to prevent metal microcorrosion, comprising the steps of:
- providing a semiconductor wafer having an overlying metal layer;
- depositing photoresist on the overlying metal layer;
- exposing selective portions of the photoresist to radiation;
- developing the photoresist in an aqueous solution to remove the portions of photoresist exposed to radiation;
- rinsing the semiconductor device in a reservoir of alkaline solution to remove the aqueous solution from the semiconductor device and to prevent precipitation of the aqueous solution;
- rinsing the semiconductor device in a reservoir of de-ionized water for a predetermined period of time;
- and
- after rinsing in de-ionized water, rinsing the semiconductor device in a reservoir of saturated carbonated water to remove any traces of the aqueous solution and the alkaline solution from the semiconductor device without corroding the overlying metal layer.
Dependencies are inferred from the claim text.