Method of controlling metal thin film formation conditions
AssigneeKabushiki Kaisha Toshiba
InventorsMasahiro Abe, Yasukazu Mase, Toshihiko Katsura, Masaharu Aoyama
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Abstract
Measurement of temperature - internal stress characteristics of an Al thin film formed on an Si substrate is performed. The amount of an impurity or impurities mixed in the thin f ilm can be obtained in accordance with the measured characteristics. A migration start temperature of Al atoms in the thin film in the characteristics obtained when the temperature is increased is fed back as information to the thin film formation step, thereby controlling an impurity amount in an atmosphere for forming the thin film.
Claims10
A method of controlling formation conditions of a metal film to be formed on a substrate, comprising the steps of:
- forming a first metal film under first conditions including an impurity amount in a formation atmosphere;
- measuring temperature-internal stress characteristics of the first metal film;
- deriving from the characteristics a migration start temperature of atoms constituting the first metal film;
- and
- adjusting the impurity amount in the formation atmosphere on the basis of a deviation of the migration start temperature from a reference temperature, when forming in the formation atmosphere a second metal film which has substantially the same composition as that of the first metal film.
Dependencies are inferred from the claim text.