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US 5,175,075 AGranted
Positron beam lithography
AssigneeTexas Instruments Incorporated
InventorsGary A. Frazier, Keith Bradshaw
Life of this patent
Estimating the term…
Abstract
Resist (402) is exposed by a beam of positrons (320) is an apparatus (300) similar to an electron beam lithography machine.
Claims16
A method of lithography comprising the step of:
- (a) exposing a resist with annihilative particles wherein antiparticles are annihilated by electrons or nucleons in said resist to form a mask.
A method of lithography comprising the step of:
- (a) etching a material with annihilative particles wherein antiparticles are annihilated by electrons or nucleons in said material such that an etched pattern is obtained.
Dependencies are inferred from the claim text.