Anti-fuse structures and methods for making same
AssigneeVLSI Technology, Inc.
InventorsWilliam J. Boardman, David P. Chan, Kuang-Yeh Chang, Calvin T. Gabriel, Vivek Jain, Subhash R. Nariani
Life of this patent
Estimating the term…
Loading patent…
AssigneeVLSI Technology, Inc.
InventorsWilliam J. Boardman, David P. Chan, Kuang-Yeh Chang, Calvin T. Gabriel, Vivek Jain, Subhash R. Nariani
Estimating the term…
An anti-fuse structure characterized by a substrate, an oxide layer formed over the substrate having an opening formed therein, an amorphous silicon material disposed within the opening and contacting the substrate, and oxide spacers lining the walls of a recess formed within the amorphous silicon. The spacers prevent failures of the anti-fuse structures by covering cusps formed in the amorphous silicon material. The method of the present invention forms the above-described anti-fuse structure and further solves the problem of removing unwanted spacer material from areas outside of the anti-fuse structure locations.
A method for making an anti-fuse structure comprising:
A method for making an array of anti-fuse structures comprising:
Dependencies are inferred from the claim text.