Method and apparatus for uniform flow distribution in plasma reactors
AssigneeTexas Instruments Incorporated
InventorJeffrey A. McKee
Life of this patent
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Abstract
A plasma flow is uniformly distributed over the surface of a water (76) by an L-shaped tube (64) and a distribution ring (62). A dispersal gas, which may either comprise an inert gas or a gas that cooperates with the reactive species of the plasma, is sprayed from the tube (64) and the ring (62) into the flow of the plasma. The ring (62) comprises a hollow tube encircling the outlet of a plasma reactor. A gas is circulated through the ring (62) within the hollow interior (66) and is emitted therefrom by nozzles (70). The tube (64) comprises a quartz or anodized aluminum L-shaped tube which is positioned directly in the flow of the plasma. The gas is emitted from the tube (64) in a direction directly opposite and into the flow of the plasma.
Claims25
An apparatus for providing uniform flow distribution of plasma to a semiconductor wafer, comprising:
- a gas;
- a gas dispersal unit positioned adjacent the flow of the plasma, said unit defining hole for expulsion of said gas;
- and
- adjustable nozzles attached over said holes for directing said gas into the plasma to uniformly distribute flow of the plasma to the wafer.
An apparatus for providing uniform flow distribution of plasma to a semiconductor wafer comprising:
- a gas;
- and
- a tube positioned directly in the flow of the plasma to allow expulsion of said gas in a direction opposite and into the flow of the plasma.
An apparatus for providing uniform flow distribution of plasma to a semiconductor wafer comprising:
- a gas;
- a tube positioned directly in the flow of the plasma to allow expulsion of a first said gas in a direction directly opposite and into the flow the plasma;
- and
- a generally hollow container positioned around the flow the plasma, said container having holes therethrough for expulsion of a second said gas into the plasma.
An apparatus for providing even flow distribution of plasma to process a semiconductor wafer in a downstream remote reactor, comprising:
- a supply of dispersal gas;
- a sprayer positioned adjacent an outlet of the reactor, said sprayer defining apertures to emit said gas;
- and
- adjustable nozzles over said apertures to direct said gas into the flow of the plasma to uniformly distribute the flow of the plasma to the wafer.
Dependencies are inferred from the claim text.