Thin film capacitor and manufacturing method thereof

A method of manufacturing thin film capacitors comprising the steps of:

• forming a first electrode layer consisting essentially of a member selected from the group consisting of titanium, titanium silicide, titanium nitride, tantalum, molybdenum, tungsten, tantalum silicide, molybdenum silicide, tungsten silicide, alloys thereof and compounds thereof, on a silicon electrode;
• forming a second electrode layer consisting essentially of high-melting point noble metal on said first electrode layer;
• forming a dielectric layer consisting essentially of an oxide ferroelectric material on said second electrode layer;
• and
• forming a third electrode layer on said dielectric layer.

A thin film capacitor comprising:

• a silicon electrode;
• a first electrode layer consisting essentially of a member selected from the group consisting of rhenium oxide, osmium oxide, rhodium oxide, iridium oxide and compounds thereof, formed on said silicon electrode;
• a second electrode layer consisting essentially of a high-melting point noble metal formed on said first electrode layer;
• a dielectric layer consisting essentially of an oxide ferroelectric material formed on said second electrode layer;
• and
• a third electrode layer formed on said dielectric layer.

A method of manufacturing this film capacitors comprising the steps of:

• forming a first electrode layer consisting essentially of a member selected from the group consisting of rhenium oxide, osmium oxide, rhodium oxide, iridium oxide and compounds thereof, on a silicon electrode;
• forming a second electrode layer consisting essentially of a high-melting point noble metal on said first electrode layer;
• forming a dielectric layer consisting essentially of an oxide ferroelectric material on said second electrode layer;
• and
• forming a third electrode layer on said dielectric layer.

A method of manufacturing thin film capacitors comprising the steps of:

• forming a first electrode layer consisting essentially of a member selected from the group consisting of rhenium silicide, osmium silicide, rhodium silicide, iridium silicide and compounds thereof, on a silicon electrode;
• oxidizing, then, said first electrode layer at temperatures in the range of 400.degree. C. to 700.degree. C.;
• forming a second electrode layer consisting essentially of a high-melting point noble metal on said oxidized first electrode layer;
• forming a dielectric layer consisting essentially of an oxide ferroelectric material on said second electrode layer;
• and
• forming a third electrode layer on said dielectric layer.