Semiconductor crystal growth apparatus
OwnerJunichi Nishizawa, Hitochi Abeinventors
Life of this patent
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Abstract
A substrate is heated in a crystal growth vessel evacuated to a ultrahigh vacuum, and gases containing component elements of a crystal to be grown on the substrate are introduced into the vessel under predetermined conditions to cause successive epitaxial growth of single molecular layers, the number of growth cycles being automatically controlled. A mass analyzer is disposed opposite to the substrate in the vessel so that the progress of crystal growth can be incessantly traced and evaluated for each of the molecular layers. An etchant gas introduction nozzle extends into the vessel to make etching treatment of the surface of the substrate in the evacuated vessel prior to the crystal growth.
Claims11
An apparatus for forming a single crystalline thin film of a semiconductor crystal on a substrate, comprising:
- a crystal growth vessel enclosing said substrate;
- heating means for heating said substrate;
- evacuating means for evacuating the interior of said crystal growth vessel to an ultrahigh vacuum;
- nozzle means for introducing gases containing component elements of a crystal to be grown on said substrate into said crystal growth vessel from outside;
- a means for avoiding removal of a semiconductor from the crystal growth vessel during growth of the semiconductor, said avoiding means including a mass analyzer being disposed within said crystal growth vessel proximate to said substrate for continuously monitoring and evaluating the progress of crystal growth;
- and
- control means for controlling said nozzle means to alternately introduce said gases in sequence and for a period calculated to grow at least one molecular layer of crystal in each cycle of gas introductions, said control means also controlling said evacuating means to evacuate said crystal growth vessel prior to each gas introduction by said nozzle means, so that an epitaxial growth layer of a single crystal thin film is formed with precision as high as the thickness of a single molecular layer in each cycle of gas introduction.
An apparatus for growing a crystal of a semiconductor on a substrate, comprising:
- a crystal growth vessel enclosing said substrate;
- means for heating said substrate;
- evacuating means for evacuating the interior of said crystal growth vessel to an ultra high vacuum;
- nozzle means for introducing an external source of gases, including first gaseous molecules containing at least one component of a crystal and second gaseous molecules chemically reachable with said first gaseous molecules;
- a means for avoiding removal of a semiconductor from the crystal growth vessel during growth of the semiconductor, said avoiding means including a mass analyzer being disposed within the vessel proximate to said substrate for continuously monitoring and evaluating the progress of growth of a crystal;
- and
- control means for controlling said nozzle means to alternately introduce said gases in sequence and for a period calculated to grow at least one molecular layer of crystal in each cycle of gas introduction, said control means also controlling said evacuating means to evacuate said crystal growth vessel prior to each gas introduction by said nozzle means, so that an epitaxial growth layer of a single crystal thin film is formed at the rate of a single molecular layer in each cycle of gas introduction.
In an apparatus for growing a crystal of a semiconductor, the apparatus being of the type including a substrate;
- a growth vessel enclosing said substrate;
- means for heating said substrate;
- and an external source of gases, including first gaseous molecules containing at least one component of a crystal and second gaseous molecules chemically reachable with said first gaseous molecules;
- the improvement comprising means for avoiding removal of a semiconductor from the growth vessel during growth of the semiconductor, said avoiding means including a mass analyzer being disposed within said growth vessel proximate said substrate for continuously monitoring and evaluating the progress of crystal growth so that an epitaxial growth layer having a desires thickness is formed with precision as precise as the thickness of a single molecular layer.
Dependencies are inferred from the claim text.