Multipinned phase charge-coupled device
AssigneeCalifornia Institute of Technology
InventorJames R. Janesick
Life of this patent
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Abstract
A back illuminated, buried channel, multiphase charge-coupled device for imaging has a photosensitive volume bounded by silicon dioxide layers on both the front and back. The dark noise generated by these interfaces with the photosensitive volume is reduced by negative bias potential pinning the front at about -6V and the back at about -0.4V. To create fixed barrier phases at the front for accumulation within each pixel comprised of multiphase gates, positive ions are implanted at one phase gate while the others are phase clocked into channel inversion. Otherwise the phase clock of at least one gate must be controlled to provide accumulation to provide a "partial-inversion" technique. The negative bias at the back may be varied to adjust the quantum efficiency of the device, thus providing electronic shuttering.
Claims7
In a back-illuminated, buried-channel, multiphase charge-coupled device for imaging, said device having a buried n channel in a p layer and an insulating oxide layer between said buried channel and multiphase gates employed for control of integration and transfer of photogenerated charges, inversion means for reducing dark current generated at a front interface between said channel and said oxide layer due to surface states at said front interface by populating said front interface with free carrier holes, wherein said inversion means is implemented with a negative bias potential selectively applied by clocking to said multiphase gates during integration and transfer of charges, thereby pinning the surface potential of said front interface to a potential for inversion and positive ions implanted in said n channel at selected multiphase gates to create barrier phases within each pixel while multiphase clocks are applied to gates other than the selected gates for integration and transfer of photogenerated charges.
Dependencies are inferred from the claim text.