High energy laser mask and method of making same
OwnerSteven J. Kirch, John R. Lankard +4inventors
InventorsSteven J. Kirch, John R. Lankard, John J. Ritsko, Kurt A. Smith, James L. Speidell, James T. Yeh
Life of this patent
Estimating the term…
Abstract
The present invention is a mask and methods for making masks for use with a laser projection etching system. The unique mask is able to withstand the fluences of the high energy and high power lasers used without degrading. Specifically, the new projection etching masks are fabricated of patterned multiple dielectric layers having alternating high and low indices of refraction on a UV grade synthetic fused silica substrate in order to achieve maximum reflectivity of the laser energy in the opague areas and maximum transmissivity of the laser energy in the transparent areas of the mask.
Claims8
A method for making a mask, for use with high energy radiation sources, on a substrate comprising the steps of:
- applying a lift-off patterned mask to the substrate
- applying a plurality of layers of dielectric, each layer comprising a coating of a first material and a coating of a second material overlying said first material, the index of refraction of said second material being higher than the index of refraction of said first material and
- removing the lift-off mask and dielectric material deposited thereon.
A method for making a mask, for use with high energy radiation sources, on a substrate comprising the steps of;
- applying a layer of radiation-sensitive matter to the substrate;
- selectively irradiating said matter;
- removing the irradiated matter to reveal the underlying substrate;
- applying plurality of layers of dielectric, each layer comprising a coating of a first material and a coating of a second material overlying said first material, the index of refraction of said first material;
- and removing the lift-off mask and dielectric material disposed thereon.
A method for producing masks able to withstand high energy radiation comprising the steps of:
- providing a substrate transparent to said radiation;
- applying a plurality of layers of dielectric to said substrate, each layer comprising a coating of a first material and a coating of a second material overlying said first material, said second material having an index of refraction greater than the index of defraction of said first material;
- applying a mask pattern having patterned and non-patterned areas to the substrate;
- removing said plurality of layers of dielectric in the non-patterned areas by ion milling;
- and removing said mask pattern.
Dependencies are inferred from the claim text.