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US 4,908,692 AGranted
Fuse-containing semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsKouji Kikuchi, Kazuo Endo
Life of this patent
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Abstract
A semiconductor device comprises a semiconductor substrate, an insulating layer formed on the substrate, and a fuse deposited on the insulating layer so as to be interposed between two wiring layers. The fuse is prepared from high melting point metal silicide.
Claims8
A semiconductor device having a fuse, which device comprises:
- a semiconductor substrate;
- an insulating layer provided on said semiconductor substrate;
- at least two wiring layers separately formed on said insulating layer;
- and
- a fuse provided on said insulating layer for connecting the two wiring layers;
- wherein said fuse includes a composite body formed of a first layer of a metal silicide including a metal component, and a second layer prepared from metal material corresponding to the metal component and provided on said first layer.
3 more elements
Dependencies are inferred from the claim text.