Method for forming metallic silicide films on silicon substrates by ion beam deposition

A method for forming a film of metallic silicide of essentially uniform stoichiometry on the surface of a silicon substrate, comprising the steps of contacting an exposed surface of a silicon substrate with a beam of metal ions for depositing metal ions on the surface of the substrate, with said ions being at an energy level sufficiently low to substantially minimize metal ion loss by sputtering upon said contact and to effect penetration by said metal ions into the surface of the silicon substrate to a maximum depth of less than about 2 nm, heating the silicon substrate during the contacting thereof with the beam of metal ions to a temperature sufficient to effect diffusion of silicon atoms from said substrate to contact the metal ions as they are being deposited on said surface to essentially athermally interact therewith for continuously forming a film of metallic silicide on the surface of said silicon substrate, and maintaining said contacting of said surface with said metal ions and said heating of the substrate to continue the diffusion of silicon atoms through formed portions of said film and thereby continue the metallic-silicide forming interaction for a duration sufficient to provide said film of the metallic silicide on the surface of the silicon substrate with a thickness in the range of about 1 to 300 nm.